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rev 1 july 2005 1/19 19 stb10nk60z/-1 - stp10nk60z/fp stw10nk60z n-channel 600v-0.65 ? -10a - to220/fp-d2/i2pak-to-247 zener-protected supermesh? mosfet general features typical r ds(on) = 0.65 ? extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeability description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets including revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies, adaptor and pfc lighting package internal schematic diagram type v dss r ds(on) i d pw stb10nk60z stb10nk60z-1 STP10NK60ZFP stp10nk60z stw10nk60z 600 v 600 v 600 v 600 v 600 v <0.75 ? <0.75 ? <0.75 ? <0.75 ? <0.75 ? 10 a 10 a 10 a 10 a 10 a 115 115 35 115 156 1 2 3 1 2 3 1 2 3 1 3 1 2 3 to-220 to-220fp to-247 i2pak d2pak www.st.com
1 absolute maximum ratings stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 2/19 1 absolute maximum ratings table 1. absolute maximum ratings table 2. thermal data symbol parameter value unit to-220/d2/i2pak to-220fp to-247 v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20k ? ) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 10 10 ( note 3) 10 a i d drain current (continuous) at t c = 100 c 5.7 5.7 ( note 3) 5.7 a i dm note 2 drain current (pulsed) 36 36 ( note 3) 36 a p tot total dissipation at t c = 25 c 115 35 156 w derating factor 0.92 0.28 1.25 w/ c vesd(g-s) g-s esd (hbm c=100pf, r=1.5k ?) 4000 v dv/dt note 1 peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand volatge (dc) -- 2500 -- v t j t stg operating junction temperature storage temperature -55 to 150 c to-220 i2pak d2pak to-220fp to-247 unit rthj-case thermal resistance junction-case max 1.09 3.6 0.8 c/w rthj-pcb thermal resistance junction-pcb max (when mounted on minimum footprint) 60 c/w rthj-amb thermal resistance junction-amb max 62.5 50 c/w t l maximum lead temperature for soldering purpose 300 c
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 1 absolute maximum ratings 3/19 table 3. avalanche characteristics table 4. gate-source zener diode 1.1 protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 9a e as single pulse avalanche energy (starting tj=25 c, i d =i ar , v dd = 50v) 300 mj e ar repetitive avalanche energy (pulse width limited by tj max) 3.5 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs=1ma (open drain) 30 v
2 electrical characteristics stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 4/19 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off table 6. dynamic table 7. switching on/off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, 1 50 a i gss gate body leakage current (v ds = 0) v gs = 15v, v ds = 0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 33.754.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 20 a 0.65 0.75 ? symbol parameter test conditions min. typ. max. unit g fs note 4 forward transconductance v ds =15v, i d = 4.5a 7.8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 1370 156 37 pf pf pf c oss eq. note 5 equivalent ouput capacitance v gs =0, v ds =0v to 480v 90 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480v, i d = 8a v gs =10v (see figure 19) 50 10 25 70 nc nc nc symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =300 v, i d =4a, r g =4.7 ?, v gs =10v (see figure 20) 20 20 ns ns t d(off) t f turn-off delay time fall time v dd =300 v, i d =4a, r g =4.7 ?, v gs =10v (see figure 20) 55 30 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =480 v, i d =8a, r g =4.7 ?, v gs =10v (see figure 20) 18 18 36 ns ns ns
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 2 electrical characteristics 5/19 table 8. source drain diode (1) i sd 10a, di/dt 200a/s, v dd v (br)dss , t j t jmax (2) pulse width limited by safe operating area (3) limited only by maximum temperature allowed (4) pulsed: pulse duration = 300s, duty cycle 1.5% (5) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% symbol parameter test conditions min. typ. max. unit i sd i sdm note 2 source-drain current source-drain current (pulsed) 10 36 a a v sd note 4 forward on voltage i sd =10a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =8a, di/dt = 100a/s, v dd =40 v, tj=150 c 570 4.3 15 ns c a
2 electrical characteristics stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 6/19 2.1 typical characteristics figure 1. safe operating area for to-220/d2/i2pak figure 2. thermal impedanc for to-220/d2/i2pak figure 3. safe operating area for to-220fp figure 4. thermal impedance for to-220fp figure 5. safe operating area for to-247 figure 6. thermal impedance for to-247
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 2 electrical characteristics 7/19 figure 7. output characteristics figure 8. transfer characteristics figure 9. transconductance figure 10. static drain-source on resistance figure 11. gate charge vs gate -source voltage figure 12. capacitance variations
2 electrical characteristics stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 8/19 figure 13. normalized gate threshold voltage vs temperatute figure 14. normalized on resistance vs temperature figure 15. source-drain diode forward characteristics figure 16. normalized bvdss vs temperature figure 17. maximum avalanche energy vs te mpera ture
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 3 test circuits 9/19 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for indictive load switching and diode recovery times
4 package mechanical data stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 10/19 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack ? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 4 package mechanical data 11/19 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
4 package mechanical data stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 12/19 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 4 package mechanical data 13/19 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
4 package mechanical data stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 14/19 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 4 package mechanical data 15/19 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
5 packing mechanical data stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 16/19 5 packing mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 6 order codes 17/19 6 order codes sales type marking package packaging stb10nk60z-1 b10nk60z-1 i 2 pak tube stb10nk60zt4 b10nk60z d 2 pak tape & reel STP10NK60ZFP p10nk60zfp to-220fp tube stp10nk60z p10nk60z to-220 tube stw10nk60z w10nk60z to-247 tube
7 revision history stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 18/19 7 revision history date revision changes 26-jul-2005 2 inserted ecopack indication
stb10nk60z/-1 - stp10nk60z/fp - stw10nk60z 7 revision history 19/19 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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